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Memoria Kingston 8gb Ddr3l Sodimm Notebook 1600 Tranza

Código: KI0586
U$S 68,98
IVA incluido
decrease increase

Memoria Kingston 8gb Ddr3L Sodimm Notebook PC 1600

VENDEDOR MERCADO LIDER PLATINUM TRANZA URUGUAY

PICKUP BUCEO , CENTRO, CARRASCO o AGUADA

DESCRIPTION
This document describes ValueRAM's 1G x 64-bit (8GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low
voltage, memory module, based on sixteen 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C TCASE 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component

Memoria Kingston 8gb Ddr3L Sodimm Notebook PC 1600

VENDEDOR MERCADO LIDER PLATINUM TRANZA URUGUAY

PICKUP BUCEO , CENTRO, CARRASCO o AGUADA

DESCRIPTION
This document describes ValueRAM's 1G x 64-bit (8GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low
voltage, memory module, based on sixteen 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C TCASE 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component

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