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Memoria Kingston 4gb Ddr3l Sodimm Notebook 1600 Tranza

Código: KVR16LS11/4
U$S 35,98
IVA incluido
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Memoria Kingston 4gb Ddr3L Sodimm Notebook PC 1600

This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
¿ JEDEC standard 1.35V (1.28V ~ 1.45V) and
1.5V (1.425V ~1.575V) Power Supply
¿ VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
¿ 800MHz fCK for 1600Mb/sec/pin
¿ 8 independent internal bank
¿ Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
¿ Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
¿ 8-bit pre-fetch
¿ Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either on the fly using A12 or MRS]
¿ Bi-directional Differential Data Strobe
¿ Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
¿ On Die Termination using ODT pin
¿ Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE = 95°C
¿ Asynchronous Reset
¿ PCB: Height1.18” (30mm), double sided component

Detalles técnicos
Formato SODIMM DDR 3

Memoria Kingston 4gb Ddr3L Sodimm Notebook PC 1600

This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
¿ JEDEC standard 1.35V (1.28V ~ 1.45V) and
1.5V (1.425V ~1.575V) Power Supply
¿ VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
¿ 800MHz fCK for 1600Mb/sec/pin
¿ 8 independent internal bank
¿ Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
¿ Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
¿ 8-bit pre-fetch
¿ Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either on the fly using A12 or MRS]
¿ Bi-directional Differential Data Strobe
¿ Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
¿ On Die Termination using ODT pin
¿ Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE = 95°C
¿ Asynchronous Reset
¿ PCB: Height1.18” (30mm), double sided component

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